| PART |
Description |
Maker |
| GMR30H150CTPF3T GMR30H150C GMR30H150CTA3R GMR30H15 |
HIGH VOLTAGE POWER SCHOTTKY RECTIFIE
|
GAMMA[Gamma Microelectronics Inc.]
|
| MBRS330T3 MBRS360T3 |
surface Mount Schottky Power Rectifie
|
TY Semiconductor Co., Ltd
|
| SPK1245-C-S-A01 |
SCHOTTKY BARRIER SOLAR RECTIFIE VOLTAGE 45 Volts CURRENT 12 Amperes
|
Rectron Semiconductor
|
| CCA044V1 |
160 W 160 W dual BTL class-D audio amplifier demonstration board based on the TDA7498E
|
STMicroelectronics
|
| 156CMQ200-G |
160 A, SILICON, RECTIFIER DIODE, TO-249
|
SENSITRON SEMICONDUCTOR
|
| AD8304 AD8304ARU AD8304ARU-REEL AD8304ARU-REEL7 AD |
160 dB Logarithmic Amplifier with Photo-Diode Interface
160 dB Range (100 pA -10 mA) Logarithmic Converter
|
AD[Analog Devices]
|
| IN3265 R-IN3275 IN3260 IN3260R IN3261 IN3261R IN32 |
1600V, 160A general purpose single diode
General Purpose Rectifier
RECTIFIER DIODE, 1.2KV V(RRM), DO-9 160 A, 1200 V, SILICON, RECTIFIER DIODE
RECTIFIER DIODE, 400V V(RRM), DO-9 160 A, 400 V, SILICON, RECTIFIER DIODE
1400V, 160A general purpose single diode
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
Powerex Power Semicondu...
|
| TC74AC164P07 TC74AC164F TC74AC164FN TC74AC164FT |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 25.10 to 28.90; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 23.72 to 24.78; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.05; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 24.54 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
CMOS Digital Integrated Circuit Silicon Monolithic 8-Bit Shift Register (S-IN, P-OUT)
|
Toshiba Corporation
Toshiba Semiconductor
|
| IRLU3410PBF |
Asynchronous SRAM; Organization (word): 512K; Organization (bit): x 8; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (36); Status: Remarks:
|
International Rectifier
|
| UPD16664 |
144/160/184/208-OUTPUT LCD COLUMN SEGMENT DRIVER WITH RAM 144/160/184/208-OUTPUT液晶柱段驱动与RAM
|
NEC, Corp.
|
